BSZ097N10NS5

BSZ097N10NS5 MOSFET OptiMOSTM5Power-Transistor,100V Features Idealforhighfrequencyswitching OptimizedtechnologyforDC/DCconverters ExcellentgatechargexRDS(on)product(FOM) N-channel,Logiclevel 100%avalanchetested Pb-freeplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplications Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 9.7 mΩ ID 62 A TSDSON-8FL (enlarged source interconnection) S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSZ097N10NS5 Package PG-TSDSON-8 FL Marking 097N10N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2020-11-05 OptiMOSTM5Power-Transistor,100V BSZ097N10NS5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . ...