MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª5Power-Transistor,80V IPB017N08N5
DataShe...
MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
OptiMOSTM
OptiMOSª5Power-
Transistor,80V IPB017N08N5
DataSheet
Rev.2.1 Final
PowerManagement&Multimarket
1Description
Features
Idealforhighfrequencyswitchingandsync.rec. ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) N-channel,normallevel 100%avalanchetested Pb-freeplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplications Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 80
V
RDS(on),max
1.7
mΩ
ID 120 A
Qoss 207 nC
QG(0V..10V)
178
nC
OptiMOSª5Power-
Transistor,80V IPB017N08N5
D²PAK
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPB017N08N5
Package PG-TO 263-3
Marking 017N08N5
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
2
Rev.2.1,2014-05-05
OptiMOSª5Power-
Transistor,80V
IPB017N08N5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . ...