SI1308EDL

www.vishay.com Si1308EDL Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. 0.132 at VGS = 10 V 0.144 at VGS = 4.5 V 0.185 at VGS = 2.5 V ID (A) c 1.5 1.4 1.3 SOT-323 SC-70 (3 leads) Qg (TYP.) 1.4 nC D 3 2 S 1 G Top View Marking Code: KG Ordering Information: Si1308EDL-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® power MOSFET 100 % Rg tested Typical ESD performance 1800 V Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Smart phones, tablet PC’s - DC/DC converters - Boost converters - Load switch, OVP switch G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg LIMIT 30 ± 12 1.4 1.1 1.5 a, b 1.2 a, b 6 0.4 0.3 0.5 0.3 0.4 a, b 0.3 a, b -55 to +150 260 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Based on TC = 25 °C. d. Maximum u...