SI2372DS

www.vishay.com Si2372DS Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 0.033 at VGS = 10 V 30 0.038 at VGS = 6 V 0.043 at VGS = 4.5 V SOT-23 (TO-236) ID (A) d 5.3 4.9 4.6 Qg (TYP.) 2.9 nC D 3 FEATURES TrenchFET® power MOSFET 100 % Rg tested Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS DC/DC converter Load switch Power management D 2 S 1 G Top View Marking Code: F4 Ordering Information: Si2372DS-T1-GE3 (Lead (Pb)-free and Halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, Tstg LIMIT 30 ± 20 5.3 4.2 4 a, b 3.2 a, b 25 1.4 0.8 a, b 1.7 1.1 0.96 a, b 0.62 a, b -55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, c Maximum Junction-to-Foot (Drain) t≤5s Steady State Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 175 °C/W. d. TC = 25 °C SYMBOL RthJA RthJF TYPICAL 100 60 MAXIMUM 130 75 UNIT °C/W S14-0769-Rev. A, 14-A...