SI4162DY

N-Channel 30-V (D-S) MOSFET Si4162DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0079 at VGS = 10 V 30 0.010 at VGS = 4.5 V ID (A) 19.3a 17.1a Qg (Typ.) 8.8 nC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4162DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested APPLICATIONS DC/DC - High Side - VRM - POL - Server D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1 mH Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IAS EAS IS PD TJ, Tstg Soldering Recommendations (Peak Temperature) Limit 30 ± 20 19.3a 15.4 13.6b, c 10.9b, c 70 31 48 4.2a 2.1b, c 5 3.2 2.5b, c 1.6b, c - 55 to 150 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Symbol RthJA RthJC Typical 38 20 Maximum 50 25 RoHS COMPLIANT Unit V A mJ A W °C Unit °C/W Document Number: 68967 S-...