SI5936DU

New Product Dual N-Channel 30-V (D-S) MOSFET Si5936DU Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.030 at VGS = 10 V 30 0.040 at VGS = 4.5 V ID (A)a 6 6 Qg (Typ.) 3.5 nC PowerPAK ChipFET Dual Marking Code CF XXX Lot Traceability and Date Code Part # Code 3.0 mm 1.8 mm Bottom View Ordering Information: Si5936DU-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFET Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Network System Power DC/DC D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e VDS VGS ID IDM IS PD TJ, Tstg Limit 30 ± 20 6a 6a 6a, b, c 5.3b, c 25 6a 1.9b, c 10.4 6.7 2.3b, c 1.5b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t5s Steady State Symbol RthJA RthJ...