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TGBR10V200

Unisonic Technologies

TRENCH MOS SCHOTTKY BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO., LTD TGBR10V200 Advance TRENCH MOS SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC TGBR10...


Unisonic Technologies

TGBR10V200

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Description
UNISONIC TECHNOLOGIES CO., LTD TGBR10V200 Advance TRENCH MOS SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC TGBR10V200 is a trench mos schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high current capability, etc. The UTC TGBR10V200 suitable for free wheeling, high frequency inverters, polarity protection, and low voltage.  FEATURES * Very low forward voltage drop * High current capability * High surge capability * High efficiency  SYMBOL DIODE  ORDERING INFORMATION Ordering Number Lead Free Halogen Free TGBR10V200L-TA3-T TGBR10V200G-TA3-T TGBR10V200L-TF3-T TGBR10V200G-TF3-T Note: Pin Assignment: A: Anode K: Cathode Package TO-220 TO-220F Pin Assignment 123 AKA AKA Packing Tube Tube  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R232-005.a TGBR10V200 Advance DIODE  ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage (Note 1) VRM 200 V Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM VRRM 200 200 V V Average Rectified Output Current TC=125°C IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 180 A Operating Junction Temperature TJ -65~+150 °C Storage Temperature TSTG -65~+150 ...




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