HWL26NPB

Features Plastic Packaged GaAs Power FET Suitable for Commercial Wireless Applications High Efficiency 3V to 6V Operation Description The HWL26NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications. HWL26NPB L-Band GaAs Power FET Autumn 2002 V1 Outline Dimensions 1 23 Pin 1: Source Pin 2: Gate Pin 3: Drain Absolute Maximum Ratings VDS Drain to Source Voltage +7V VGS Gate to Source Voltage -5V ID Drain Current IG Gate Current IDSS 1mA TCH Channel Temperature 150°C TSTG Storage Temperature -65 to +150°C PT Power Dissipation 0.7 W PB Package (SOT-23) Electrical Specifications (TA=25°C) f=1900 MHz for all RF Tests Symbol IDSS VP gm Rth P1dB G1dB PAE Parameters & Conditions Saturated Current at VDS=5V, VGS=0V Pinch-off Voltage at VDS=5V, ID=11mA Transconductance at VDS=5V, ID=110mA Thermal Resistance Power Output at Test Points VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Gain at 1dB Compression Point VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Power-Added Efficiency (POUT = P1dB) VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS Units mA V mS °C/W dBm dB % Min. 150 -3.5 - 21.0 23.0 9.0 10.0 Typ. 220 -2.0 120 100 21.5 24.5 10.0 11.0 40.0 45.0 Max. - -1.5 - - - - Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to...