HWL30YRA

Features Low Cost GaAs Power FET Class A or Class AB Operation Typical 16.5 dB Gain 5V to 10V Operation Description The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. HWL30YRA L-Band GaAs Power FET Autumn 2002 V1 Outline Dimensions Absolute Maximum Ratings VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current IG Gate Current TCH Channel Temperature TSTG PT* Storage Temperature Power Dissipation * mounted on an infinite heat sink. +15V -5V IDSS 3 mA 175°C -65 to +175°C 6W RA Package (Ceramic) Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests Symbol IDSS VP gm Rth P1dB G1dB PAE Parameters & Conditions Saturated Current at VDS=3V, VGS=0V Pinch-off Voltage at VDS=3V, ID=30mA Transconductance at VDS=3V, ID=300mA Thermal Resistance Power Output at Test Points VDS=10V, ID=0.5IDSS Gain at 1dB Compression Point VDS=10V, ID=0.5IDSS Power-Added Efficiency (POUT = P1dB) VDS=10V, ID=0.5IDSS Units mA V mS °C/W dBm dB % Min. 500 -3.5 30 15 35 Typ. 600 -2.0 300 15 31 16.5 45 Max. 900 -1.5 25 - - - Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. Typical Performance at 25°C Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=10.0V, Ids= 0.5 Idss HWL30YRA L-Band Pow...