Document
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO 252) ID
100 V 8.2 mW 80 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
Package Marking
PG-TO220-3 086N10N
PG-TO262-3 086N10N
PG-TO263-3 083N10N
PG-TO252-3 082N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=73 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80 58 320 110 ±20 125 -55 ... 175 55/175/56
Unit A
mJ V W °C
1)J-STD20 and JESD22 2) See figure 3
Rev. 2.6
page 1
2013-07-09
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case Thermal resistance, junction - ambient
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
-
- 1.2 K/W - 62 - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
100
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=75 µA 2 2.7 3.5
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V, T j=25 °C
-
0.1
1 µA
V DS=100 V, V GS=0 V, T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1 100 nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=73 A, TO 220, TO 262
-
7.4 8.6 mW
V GS=10 V, I D=73 A, - 7.2 8.3 TO263
Gate resistance
V GS=10 V, I D=73 A, TO 252
-
V GS=6 V, I D=36 A, TO 220, TO 262
-
V GS=6 V, I D=36 A, TO 263
-
V GS=6 V, I D=36 A, TO 252
-
RG -
7 8.2 9.3 15.4 9.0 15.1 8.9 15 1 -W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max, I D=80 A
45
89
-S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 2.6
page 2
2013-07-09
Parameter
Symbol Conditions
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
min.
Values typ.
Unit max.
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
C iss C oss C rss t d(on) tr t d(off) tf
V GS=0 V, V DS=50 V, f =1 MHz
V DD=50 V, V GS=10 V, I D=73 A, R G,ext=1.6 W
-
2990 523 21 18 42 31
8
3980 pF 696
- ns -
Gate Charge Characteristics4) Gate to source charge Gate .