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IPB083N10N3G Dataheets PDF



Part Number IPB083N10N3G
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPB083N10N3G DatasheetIPB083N10N3G Datasheet (PDF)

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.2 mW 80 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249.

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IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.2 mW 80 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Package Marking PG-TO220-3 086N10N PG-TO262-3 086N10N PG-TO263-3 083N10N PG-TO252-3 082N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=73 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 58 320 110 ±20 125 -55 ... 175 55/175/56 Unit A mJ V W °C 1)J-STD20 and JESD22 2) See figure 3 Rev. 2.6 page 1 2013-07-09 IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) - - 1.2 K/W - 62 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=75 µA 2 2.7 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=100 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=73 A, TO 220, TO 262 - 7.4 8.6 mW V GS=10 V, I D=73 A, - 7.2 8.3 TO263 Gate resistance V GS=10 V, I D=73 A, TO 252 - V GS=6 V, I D=36 A, TO 220, TO 262 - V GS=6 V, I D=36 A, TO 263 - V GS=6 V, I D=36 A, TO 252 - RG - 7 8.2 9.3 15.4 9.0 15.1 8.9 15 1 -W Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=80 A 45 89 -S 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.6 page 2 2013-07-09 Parameter Symbol Conditions IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss C oss C rss t d(on) tr t d(off) tf V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=73 A, R G,ext=1.6 W - 2990 523 21 18 42 31 8 3980 pF 696 - ns - Gate Charge Characteristics4) Gate to source charge Gate .


HWL30YRA IPB083N10N3G IPP086N10N3G


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