IPS110N12N3G

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,120V OptiMOS™3Power-Transistor IPD_S110N12N3G DataSheet Rev.2.4 Final Industrial&Multimarket OptiMOSTM3Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen free according to IEC61249-2-21 * Ideal for high-frequency switching and synchronous rectification Type IPS110N12N3 G IPD110N12N3 G IPD110N12N3 G IPS110N12N3 G 120 V 11 mΩ 75 A Package PG-TO251-3 PG-TO252-3 Marking 110N12N 110N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse Gate source voltage3) E AS V GS I D=75 A, R GS=25 Ω P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V * Except package TO251-3 Rev. 2.4 page 1 Value 75 54 300 120 ±20 136 -55 ... 175 55/175/56 Unit A mJ V W °C 2015-06-24 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm...