IPD180N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product...
IPD180N10N3 G
OptiMOSTM3 Power-
Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max TO-263 ID
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target application
Ideal for high-frequency switching and synchronous rectification
Halogen-free according to IEC61249-2-21
Type
IPD180N10N3 G
100 V 18 mW 43 A
Package Marking
PG-TO252-3 180N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=33 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3
Value
43 30 172 50 ±20 71 -55 ... 175 55/175/56
Unit A
mJ V W °C
Rev. 2.3
page 1
2014-05-19
IPD180N10N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case Thermal resistance, junction - ambient
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 2.1 K/W - - 75 - - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source le...
