MOS GATED BARRIER RECTIFIER
UNISONIC TECHNOLOGIES CO., LTD
MGBR10S40
Preliminary
MOS GATED BARRIER RECTIFIER
DESCRIPTION
The UTC MGBR10S40 is ...
Description
UNISONIC TECHNOLOGIES CO., LTD
MGBR10S40
Preliminary
MOS GATED BARRIER RECTIFIER
DESCRIPTION
The UTC MGBR10S40 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high current capability, etc.
The UTC MGBR10S40 suitable for free wheeling, high frequency inverters, polarity protection, and low voltage.
FEATURES
* Super low forward voltage drop * High current capability * High surge capability * High efficiency
SYMBOL
DIODE
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MGBR10S40L-T27-R
MGBR10S40G-T27-R
Note: Pin Assignment: A: Anode K: Common Cathode
Package TO-277
Pin Assignment 123 AKA
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R601-243.a
MGBR10S40
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage (Note 1)
VRM 40 V
Working Peak Reverse Voltage Peak Repetitive Reverse Voltage
VRWM VRRM
40 40
V V
RMS Reverse Voltage Average Rectified Output Current
TC=125°C
VR(RMS) IO
28 10
V A
Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
175
A
Operating Junction Temperature
TJ
-65~+150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absol...
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