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MGBR20L200C

UTC

Dual MOS GATED BARRIER RECTIFIER

UNISONIC TECHNOLOGIES CO.,LTD MGBR20L200C DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR20L200C is a dual m...


UTC

MGBR20L200C

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Description
UNISONIC TECHNOLOGIES CO.,LTD MGBR20L200C DUAL MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR20L200C is a dual mos gated barrier rectifiers,it uses UTC’s advanced technology to provide customers withlow forward voltage drop and high switching speed, etc.  FEATURES * Low forward voltage drop * High switching speed  SYMBOL DIODE  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MGBR20L200CL-TA3-T MGBR20L200CG-TA3-T TO-220 MGBR20L200CL-TF3-T MGBR20L200CG-TF3-T TO-220F MGBR20L200CL-TF1-T MGBR20L200CG-TF1-T TO-220F1 MGBR20L200CL-T47-T MGBR20L200CG-T47-T TO-247 Note: Pin Assignment: A: Anode K: Common Cathode Pin Assignment 123 AKA AKA AKA AKA Packing Tube Tube Tube Tube  MARKING www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 3 QW-R204-035.D MGBR20L200C DIODE  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load,derate current by 20%. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 200 V WorkingPeak Reverse Voltage Peak Repetitive Reverse Voltage VRWM VRRM 200 200 V V Average Rectified Output Current (TC=140°C) Per Leg Total IO 10 A 20 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 180 A Repetitive Peak Avalanche Power (1μs, 25°C) PARM 5000 W Operating Junction Temperature Storage Temperature TJ TSTG -65 ~ +150 -65 ~ +150 °...




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