N-channel MOSFET
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N-Channel 30 V (D-S) MOSFET
Si1002R
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) (Ω) MAX. 0.56...
Description
www.vishay.com
N-Channel 30 V (D-S) MOSFET
Si1002R
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) (Ω) MAX. 0.560 at VGS = 4.5 V 0.620 at VGS = 2.5 V 0.700 at VGS = 1.8 V 1.100 at VGS = 1.5 V
SC-75A
D 3
ID (A) 0.5 0.2 0.2 0.05
Qg (TYP.) 0.72 nC
1 G Top View
2 S
Marking Code: L
Ordering Information: Si1002R-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
TrenchFET® power MOSFET 100 % Rg tested Gate-source ESD protected: 1000 V Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
Load switch
High speed switching DC/DC converters / boost converters For smart phones, tablet PCs and
mobile computing
G
D
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C) a
TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current (t = 100 μs)
IDM
Continuous Source-Drain Diode Current
TA = 25 °C
IS
Maximum Power Dissipation a
TA = 25 °C TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT 30 ±8
0.61 a,b 0.49 a,b
2 0.18 a,b 0.22 a,b 0.14 a,b -55 to 150
UNIT V
A A W °C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient b
Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s.
t≤5s Steady State
SYMBOL RthJA
TYP. 470 560
MAX. 565 675
UNIT °C/W
S14-0770-Rev. A, 14-Apr-14
1
Document Number: 64257
For technical questions, co...
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