SI1036X

www.vishay.com Dual N-Channel 30 V (D-S) MOSFET Si1036X Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. 0.540 at VGS = 4.5 V 0.600 at VGS = 2.5 V 0.700 at VGS = 1.8 V 1.100 at VGS = 1.5 V ID (A) 0.5 0.2 0.2 0.05 Qg (TYP.) 0.72 nC SC-89 Dual (6 leads) S2 G2 4 D1 5 6 3 2 D2 1 G1 S1 Top View Marking Code: B Ordering Information: Si1036X-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFET 100 % Rg tested Gate-source ESD protected: 1000 V Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Load switch High speed switching DC/DC converters / boost converters For smart phones, tablet PCs and mobile computing D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) a TA = 25 °C TA = 70 °C ID Pulsed Drain Current (t = 100 μs) IDM Continuous Source-Drain Diode Current TA = 25 °C IS Maximum Power Dissipation a TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 30 ±8 0.61 a,b 0.49 a,b 2 0.18 a,b 0.22 a,b 0.14 a,b -55 to 150 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient b Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. t5s Steady State SYMBOL RthJA TYP. 470 560 MAX. 565 675 UNIT V A A W °C UNIT °C/W S14-0147-Rev. A, 27-Jan...