SI1414DH

www.vishay.com Si1414DH Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.046 at VGS = 4.5 V 0.050 at VGS = 2.5 V 0.057 at VGS = 1.8 V ID (A) a 4 4 4 Qg (TYP.) 5.7 nC SOT-363 SC-70 Single (6 leads) S 4 D 5 D 6 FEATURES TrenchFET® power MOSFET 100 % Rg tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DC/DC converters Boost converters Load switches D 1 D Top View 2 D 3 G Marking Code: AP Ordering Information: Si1414DH-T1-GE3 (Lead (Pb)-free and Halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TF = 25 °C TF = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current TF = 25 °C TA = 25 °C TF = 25 °C Maximum Power Dissipation TF = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e VDS VGS ID IDM IS PD TJ, Tstg LIMIT 30 ±8 4a 4a 4 a, b, c 3.7 a, b, c 20 2.3 1.3 b, c 2.8 1.8 1.56 b, c 1 b, c -55 to 150 260 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient b, d t≤5s Maximum Junction-to-Foot (Drain) Steady State Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. SYMBOL RthJA RthJF ...