SI4010DY

www.vishay.com Si4010DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) 0.0034 at VGS = 10 V 0.0044 at VGS = 4.5 V ID (A)a 31.3 27.5 Qg (Typ.) 22.5 nC S1 S2 S3 G4 SO-8 8D 7D 6D 5D FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization:  For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS Synchronous Rectification DC/DC Conversion Telecom/Server Industrial D G Top View Ordering Information: Si4010DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 + 20, - 16 31.3 24.9 20.2b, c 16.1b, c 100 5.4 2.2b, c 20 20 6 3.8 2.5b, c 1.6b, c - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t  10 s Maximum Junction-to-Foot (Drain) Steady State Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 ...