SI4126DY

New Product N-Channel 30-V (D-S) MOSFET Si4126DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.00275 at VGS = 10 V 30 0.0034 at VGS = 4.5 V ID (A)a 39 35 Qg (Typ.) 30 nC S1 S2 S3 G4 SO-8 8D 7D 6D 5D FEATURES Halogen-free TrenchFET® Power MOSFET 100 % Rg and UIS Tested APPLICATIONS Low-Side DC/DC Conversion - Notebook - Gaming D G Top View Ordering Information: Si4126DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IDM IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 30 ± 20 39 31 26.5b, c 21b, c 70 7.0 3.1b, c 40 80 7.8 5.0 3.5b, c 2.2b, c - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 °C/W. Symbol RthJA RthJF Document Number: 69994 S-80895-Rev. B, 21-Apr-08 Typical 29 13 Maximum 35 16 Unit °C/W www.vishay.c...