N-Channel MOSFET
New Product
N-Channel 30-V (D-S) MOSFET
Si4166DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0039 at VGS...
Description
New Product
N-Channel 30-V (D-S) MOSFET
Si4166DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0039 at VGS = 10 V 30
0.0055 at VGS = 4.5 V
ID (A)a 30.5 25.6
Qg (Typ.) 21.5 nC
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4166DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES Halogen-free TrenchFET® Power MOSFET 100 % Rg and UIS Tested APPLICATIONS Low-Side DC/DC Conversion
- Notebook PC - Gaming
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Avalanche Energy
L = 0.1 mH
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30 ± 20 30.5 24.5 20.5b, c 16.5b, c 70 5.9 2.7b, c 30 45 6.5 4.2 3.0b, c 1.9b, c - 55 to 150
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain)
t ≤ 10 s Steady State
Notes:
a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Symbol
RthJA RthJF
Typical 34 15
Maximum 41 19
RoHS
COMPLIANT
Unit V A mJ W °C
Unit °C/W
Document Number: 68953 S-82661-Rev. A, 03-Nov...
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