SI4168DY

N-Channel 30-V (D-S) MOSFET Si4168DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0057 at VGS = 10 V 30 0.0076 at VGS = 4.5 V ID (A)a 24 21 Qg (Typ.) 13.8 nC FEATURES Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook DC/DC S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4168DY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1 mH Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IAS EAS IS PD TJ, Tstg Limit 30 ± 20 24 19.4 16b, c 14b, c 70 35 61 4.7 2.1b, c 5.7 3.6 2.5b, c 1.6b, c - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Symbol RthJA RthJF Typical 35 18 Maximum 50 22 Unit V A mJ A W °C Unit °C/W Document Number: 69005 S-82668-Rev. A, 03-Nov-08 www.vishay.com 1 Si4168DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unl...