Dual N-Channel MOSFET
New Product
Dual N-Channel 25 V (D-S) MOSFET
Si4228DY
Vishay Siliconix
#
PRODUCT SUMMARY
VDS (V) 25
RDS(on) (Ω) 0.0...
Description
New Product
Dual N-Channel 25 V (D-S) MOSFET
Si4228DY
Vishay Siliconix
#
PRODUCT SUMMARY
VDS (V) 25
RDS(on) (Ω) 0.018 at VGS = 10 V 0.020 at VGS = 4.5 V 0.024 at VGS = 2.5 V
ID (A)a, e 8 8 7.5
Qg (Typ.) 7.8 nC
S1 1 G1 2 S2 3 G2 4
SO-8
Top View
8 D1 7 D1 6 D2 5 D2
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET
100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Synchronous Buck Converter
DC/DC Converter
D1
D2
G1 G2
Ordering Information: Si4228DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.1 mH
IS
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
S1 N-Channel MOSFET
Limit 25 ± 12 8e 8e
8b, c, e 6.9b, c
50 2.6 1.7b, c 15 11.25 3.1 2 2b, c 1.3b, c - 55 to 150
S2 N-Channel MOSFET
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s.
d. Maximum under steady state ...
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