SI7994DP

New Product Dual N-Channel 30-V (D-S) MOSFET Si7994DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0056 at VGS = 10 V 30 0.007 at VGS = 4.5 V ID (A)a 60 60 Qg (Typ.) 24 nC PowerPAK SO-8 FEATURES Halogen-free TrenchFET® Power MOSFET APPLICATIONS System Power DC/DC Notebook Server RoHS COMPLIANT 6.15 mm D1 8 D1 7 D2 6 D2 5 S1 1 G1 2 5.15 mm S2 3 G2 4 Bottom View Ordering Information: Si7994DP-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 85 °C TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e VDS VGS ID IDM IS PD TJ, Tstg Limit 30 ± 20 60a 60a 20b, c 16b, c 60 38 2.9b, c 46 29 3.5b, c 2.2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 26 2.2 35 °C/W 2.7 Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless pac...