N-channel MOSFET
www.vishay.com
Si8902AEDB
Vishay Siliconix
N-Channel 24 V (D-S) MOSFET
PRODUCT SUMMARY
VS1S2 (V) 24
RS1S2 (Ω) Max. ...
Description
www.vishay.com
Si8902AEDB
Vishay Siliconix
N-Channel 24 V (D-S) MOSFET
PRODUCT SUMMARY
VS1S2 (V) 24
RS1S2 (Ω) Max. 0.028 at VGS = 4.5 V 0.029 at VGS = 3.7 V 0.031 at VGS = 2.5 V 0.037 at VGS = 1.8 V
IS1S2 (A) a 5.9 5.8 5.6 5.1
MICRO FOOT® 2.4 x 1.6 S1
G1 2
8902xAxxE
S2 3 4
1.6 mm 1 2.4 mm Backside View
6
5 G2
S2 Bump Side View
1 S1
FEATURES TrenchFET® power MOSFET Small 2.4 mm x 1.6 mm outline Thin 0.6 mm max. height Typical ESD protection 5000 V (HBM) Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS Battery protection switch Bi-directional switch
S1
G1 R
R G2
Marking Code: 8902AE
Ordering Information: Si8902AEDB-T2-E1 (Lead (Pb)-free and Halogen-free)
N-Channel
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Source 1-to-Source 2 Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Source 1-to-Source 2 Current (TJ = 150 °C)
TC = 85 °C TA = 25 °C
TA = 85 °C
Pulsed Source 1-to-Source 2 Current (t = 100 μs)
TC = 25 °C
Maximum Power Dissipation
TC = 85 °C TA = 25 °C
TA = 85 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c
VS1S2 VGS IS1S2 ISM PD TJ, Tstg
Limit 24 ± 12 11 b
7.9 b 5.9 a 4.3 a 40 5.7 b 3b 1.7 a 0.9 a -55 to 150 260
Unit V A
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient a, d Maximum Junction-to-Case b
t≤5s Steady State
Symbol RthJA RthJC
Notes
a. Surfac...
Similar Datasheet