SI8902AEDB

www.vishay.com Si8902AEDB Vishay Siliconix N-Channel 24 V (D-S) MOSFET PRODUCT SUMMARY VS1S2 (V) 24 RS1S2 (Ω) Max. 0.028 at VGS = 4.5 V 0.029 at VGS = 3.7 V 0.031 at VGS = 2.5 V 0.037 at VGS = 1.8 V IS1S2 (A) a 5.9 5.8 5.6 5.1 MICRO FOOT® 2.4 x 1.6 S1 G1 2 8902xAxxE S2 3 4 1.6 mm 1 2.4 mm Backside View 6 5 G2 S2 Bump Side View 1 S1 FEATURES TrenchFET® power MOSFET Small 2.4 mm x 1.6 mm outline Thin 0.6 mm max. height Typical ESD protection 5000 V (HBM) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Battery protection switch Bi-directional switch S1 G1 R R G2 Marking Code: 8902AE Ordering Information: Si8902AEDB-T2-E1 (Lead (Pb)-free and Halogen-free) N-Channel S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Source 1-to-Source 2 Voltage Gate-Source Voltage TC = 25 °C Continuous Source 1-to-Source 2 Current (TJ = 150 °C) TC = 85 °C TA = 25 °C TA = 85 °C Pulsed Source 1-to-Source 2 Current (t = 100 μs) TC = 25 °C Maximum Power Dissipation TC = 85 °C TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) c VS1S2 VGS IS1S2 ISM PD TJ, Tstg Limit 24 ± 12 11 b 7.9 b 5.9 a 4.3 a 40 5.7 b 3b 1.7 a 0.9 a -55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, d Maximum Junction-to-Case b t≤5s Steady State Symbol RthJA RthJC Notes a. Surfac...