SIGC12T120E

SIGC12T120E IGBT3 Power Chip Features:  1200V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type SIGC12T120E VCE 1200V IC 8A Die Size 3.54 x 3.5 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 3.54 x 3.5 2.028 x 2.028 1.107 x 0.702 mm2 12.4 140 µm 200 mm 2213 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm  0.65mm ; max 1.2mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, IFAG IPC TD VLS, L7621M, L7621T, L7621E, Rev 2.3, 27.06.2014 SIGC12T120E Maximum Ratings Parameter Symbol Value Unit Collector-Emitter voltage, Tvj =25 C DC collector current, limited by Tvj max VCE IC 1200 1) Pulsed collector current, tp limited by Tvj max Ic,puls 24 Gate emitter voltage VGE 20 Junction temperature range Operating junction temperature Short circuit data 2 ) VGE = 15V, VCC = 900V, Tvj = 150°C Tvj Tvj tSC -40 ... +175 -40...+150 10 Reverse bias safe operating area 2 ) (RBSOA) 1 ) d...