SIR330DP

New Product N-Channel 30 V (D-S) MOSFET SiR330DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.0056 at VGS = 10 V 30 0.0075 at VGS = 4.5 V PowerPAK® SO-8 ID (A)a, g 35g 35g Qg (Typ.) 11.2 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View Ordering Information: SiR330DP-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS Synchronous Buck Converter - High-Side Switch Notebook Server D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage TC = 25 °C VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L =0.1 mH IAS EAS Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Limit 30 ± 20 35g 35g 22.2b, c 17.8b, c 70 35g 4.5b, c 20 20 27.7 17.7 5.0b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t  10 s Steady State RthJA RthJC 20...