SIR406DP

New Product N-Channel 25-V (D-S) MOSFET SiR406DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0038 at VGS = 10 V 25 0.0048 at VGS = 4.5 V ID (A)a 40g 40g Qg (Typ.) 15.8 nC PowerPAK® SO-8 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiR406DP-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS POL Server DC/DC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Limit 25 ± 20 40g 40g 27b, c 21.6b, c 70 40g 4.5b, c 30 45 48 31 5.0b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 20 2.1 25 °C/W 2.6 Notes: a. Based...