SIR820DP

New Product N-Channel 30 V (D-S) MOSFET SiR820DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0030 at VGS = 10 V 0.0038 at VGS = 4.5 V ID (A)a 40g 40g Qg (Typ.) 28.6 nC PowerPAK SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: SiR820DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter - Low Side Switch Notebook PC Graphic Cards Server D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L =0.1 mH IS IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TA = 70 °C TJ, Tstg Limit 30 ± 20 40g 40g 30b, c 24b, c 70 40g 4.5b, c 20 20 37.8 24.2 5b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t  10 s Steady State RthJA RthJC 20 2...