OptiMOS™-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...
OptiMOS™-T2 Power-
Transistor
Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
IPB160N08S4-03
Product Summary V DS R DS(on),max ID
80 V 3.2 mW 160 A
PG-TO263-7-3
Type IPB160N08S4-03
Package PG-TO263-7-3
Marking 4N0803
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS I D=80A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value 160
120
640 350 120 ±20 208 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.0
page 1
2014-06-20
IPB160N08S4-03
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 0.72 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
80 -
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=150µA
2.0
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=80V, V GS=0V, T j=25°C
- 0.03 1 µA
Gate-source leakage current Drain-source on-state resistance
V DS=80V, V...