IPI80N07S4-05

OptiMOS™-T2 Power-Transistor Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested IPB80N07S4-05 IPI80N07S4-05, IPP80N07S4-05 Product Summary VDS RDS(on),max (SMD version) ID 75 V 5.2 mW 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N07S4-05 IPI80N07S4-05 IPP80N07S4-05 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0705 4N0705 4N0705 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=40A I AS - V GS - P tot T C=25°C T j, T stg - Value 80 80 320 240 65 ±20 150 -55 ... +175 Unit A mJ A V W °C Rev. 1.0 page 1 2014-07-14 IPB80N07S4-05 IPI80N07S4-05, IPP80N07S4-05 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 1.0 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain cu...