IPC022N03L3

MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC022N03L3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC022N03L3 1Description N-channelenhancementmode FordynamiccharacterizationrefertothedatasheetofIPD075N03LG AQL0.65forvisualinspectionaccordingtofailurecatalogue ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C Diebond:solderedorglued Sawnonfoil Backsidemetallization:NiVsystem Frontsidemetallization:AlCusystem Passivation:Nitride+Imide PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 30 7.51) 2.1 x 1.05 V mΩ mm2 Thickness 175 µm Drain Gate Source Type/OrderingCode IPC022N03L3 Package Chip Marking not defined RelatedLinks - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Internal gate resistance Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD RG EAS Min. 30 1 - Values Typ. Max. -- 2.2 0.1 1 10 100 5.32) 503) 0.75 1.1 1.3 504) - Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=250µA µA VGS=0V,VDS=30V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2...