MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™2PowerMOSTransistorChip IPC26N10NR
DataSheet
Rev.2.5 Final
Industrial&Multimarket
OptiMOS™2PowerMOSTransistorChip
IPC26N10NR
1Description
•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP05CN10NG1) •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlSisystem •Passivation:nitride(onlyonedgestructure)
PowerMOSTransistorChip
Table1KeyPerformanceParameters
Parameter
Value
Unit
V(BR)DSS RDS(on) Die size
100 5.42) 6.0 x 4.36
V mΩ mm2
Thickness
250
µm
Drain
Gate Source
Type/OrderingCode IPC26N10NR
Package Chip
Marking not defined
RelatedLinks -
1) IPP05CN10N G dynamic characterization does not include the internal added RG 2) packaged in a P-TO220-3-1 (see ref. product)
Final Data Sheet
2
Rev.2.5,2014-10-03
OptiMOS™2PowerMOSTransistorChip
IPC26N10NR
2ElectricalCharacteristicsonWaferLevel
atTj=25°C,unlessotherwisespecified
Table2
Parameter
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Internal gate resistance Additional gate resistor Avalanche energy, single pulse
Symbol
V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD RG RGadd EAS
Min. 100 2 -
Values
Typ. Max.
--
-4
0.1 1
1 3.21)
100 1002)
1.0 1.2
1.8 -
16 -
1253) -
Unit Note/TestCondition
V VGS=0V,ID=1mA V VDS=VGS,ID=250µA µA VGS=0V,VDS=100V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0A V VGS=0V,IF=1A ΩΩmJ ID =50 A, RGS =25 Ω
1)typicalbaredieRDS(on);VGS=10V 2) limited by wafer test-equipment 3) Wafer tested. For general avalanche capability refer to the datasheet of IPP05CN10N G
Final Data Sheet
3
Rev.2.5,2014-10-03
3PackageOutlines
OptiMOS™2PowerMOSTransistorChip IPC26N10NR
Figure1OutlineChip,dimensionsinµm
Final Data Sheet
4
Rev.2.5,2014-10-03
OptiMOS™2PowerMOSTransistorChip IPC26N10NR
RevisionHistory
IPC26N10NR
Revision:2014-10-03,Rev.2.5
Previous Revision Revision Date 2.5 2014-10-03
Subjects (major changes since last revision) Release Final Version
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Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
5 Rev.2.5,2014-10-03
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