IPC26N12N

MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC26N12N DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC26N12N 1Description N-channelenhancementmode FordynamiccharacterizationrefertothedatasheetofIPP048N12N3G AQL0.65forvisualinspectionaccordingtofailurecatalogue ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C Diebond:solderedorglued Backsidemetallization:NiVsystem Frontsidemetallization:AlSisystem Passivation:nitride(onlyonedgestructure) PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 120 4.81) 6.6 x 3.96 V mΩ mm2 Thickness 250 µm Drain Gate Source Type/OrderingCode IPC26N12N Package Chip Marking not defined RelatedLinks - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD Min. 120 2 - Values Typ. Max. --4 0.1 1 1 100 3.02) 1003) 1.0 1.2 Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=244µA µA VGS=0V,VDS=100V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0A V VGS=0V,IF=1A 1) packaged in a P-TO220-3 (see ref. product) 2)typica...