IPC300N20N3

MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC300N20N3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC300N20N3 1Description N-channelenhancementmode Foradditionalcharacteristicsandmaxratingrefertothedatasheetof IPP110N20N3G AQL0.65forvisualinspectionaccordingtofailurecatalogue ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C Diebond:solderedorglued Backsidemetallization:NiVsystem Frontsidemetallization:AlSiCusystem Passivation:nitride+imide(onlyonedgestructure) Package:sawnonfoil PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 200 111) 6x5 V mΩ mm2 Thickness 250 µm Drain Gate Source Type/OrderingCode IPC300N20N3 Package Chip Marking not defined RelatedLinks - 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS Min. 200 2 - Values Typ. Max. -34 0.1 1 1 100 9.22) 1003) 1.0 1.2 404) - Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=270µA µA VGS=0V,VDS=160V nA VGS=20V,VDS=0V mΩ V...