MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™3PowerMOSTransistorChip IPC302N10N3
DataS...
MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
BareDie
OptiMOS™3PowerMOS
TransistorChip IPC302N10N3
DataSheet
Rev.2.5 Final
Industrial&Multimarket
OptiMOS™3PowerMOS
TransistorChip
IPC302N10N3
1Description
N-channelenhancementmode FordynamiccharacterizationrefertothedatasheetofIPB027N10N3G AQL0.65forvisualinspectionaccordingtofailurecatalogue ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C Diebond:solderedorglued Backsidemetallization:NiVsystem Frontsidemetallization:AlCusystem Passivation:nitride(onlyonedgestructure)
PowerMOS
TransistorChip
Table1KeyPerformanceParameters
Parameter
Value
Unit
V(BR)DSS RDS(on) Die size
100 2.71) 6.7 x 4.5
V mΩ mm2
Thickness
220
µm
Drain
Gate Source
Type/OrderingCode IPC302N10N3
Package Chip
Marking not defined
RelatedLinks -
2ElectricalCharacteristicsonWaferLevel
atTj=25°C,unlessotherwisespecified
Table2
Parameter
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse
Symbol
V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS
Min. 100 2 -
Values Typ. Max. -2.7 3.5 0.1 1 1 100 1.72) 1003) 1.0 1.2 454) -
Unit Note/TestCondition
V VGS=0V,ID=1mA V VDS=VGS,ID=302µA µA VGS=0V,VDS=100V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0A V VGS=0V,IF=1A mJ I...