MOSFET
MetalOxideSemiconductorFieldEffectTransistor
BareDie
OptiMOS™3PowerMOSTransistorChip IPC302N15N3
DataSheet
Rev.2.5 Final
Industrial&Multimarket
OptiMOS™3PowerMOSTransistorChip
IPC302N15N3
1Description
•N-channelenhancementmode •Foradditionalcharacterizationandmaxratingsrefertothedatasheetof IPB072N15N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride(onlyonedgestructure)
PowerMOSTransistorChip
Table1KeyPerformanceParameters
Parameter
Value
Unit
V(BR)DSS RDS(on) Die size
150 7.21) 6.7 x 4.5
V mΩ mm2
Thickness
250
µm
Drain
Gate Source
Type/OrderingCode IPC302N15N3
Package Chip
Marking not defined
RelatedLinks -
2ElectricalCharacteristicsonWaferLevel
atTj=25°C,unlessotherwisespecified
Table2
Parameter
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse
Symbol
V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS
Min. 150 2 -
Values Typ. Max. -34 0.1 1 1 100 4.92) 1003) 1.0 1.2 454) -
Unit Note/TestCondition
V VGS=0V,ID=1mA V VDS=VGS,ID=270µA µA VGS=0V,VDS=120V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0A V VGS=0V,IF=1A mJ ID =30 A, RGS =25 Ω
1) packaged in a P-TO263-3 (see ref. product) 2)typicalbaredieRDS(on);VGS=10V 3) limited by wafer test-equipment 4) Wafer tested. For general avalanche capability refer to the datasheet of IPB072N15N3 G
Final Data Sheet
2
Rev.2.5,2014-07-23
3PackageOutlines
OptiMOS™3PowerMOSTransistorChip IPC302N15N3
Figure1OutlineChip,dimensionsinµm
Final Data Sheet
3
Rev.2.5,2014-07-23
OptiMOS™3PowerMOSTransistorChip IPC302N15N3
RevisionHistory
IPC302N15N3
Revision:2014-07-23,Rev.2.5
Previous Revision Revision Date 2.5 2014-07-23
Subjects (major changes since last revision) Release Final Version
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Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
4 Rev.2.5,2014-07-23
.