OptiMOS™-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...
OptiMOS™-T2 Power-
Transistor
Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
IPD50N08S4-13
Product Summary VDS RDS(on),max ID
80 V 13.2 mW 50 A
PG-TO252-3-313
Type IPD50N08S4-13
Package
Marking
PG-TO252-3-313 4N0813
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS I D=25A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value 50
50
200 76 31 ±20 72 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.0
page 1
2014-06-30
IPD50N08S4-13
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 2.1 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=33µA
I DSS
V DS=80V, V GS=0V, T j=25°C
V DS=80V, V GS=0V, T j=125°C2)
I GSS
V GS=20V, V DS=0V
R ...
