OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...
OptiMOS®-T2 Power-
Transistor
Features N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature RoHS compliant 100% Avalanche tested
IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04
Product Summary VDS RDS(on),max (SMD version) ID
80 V 4.1 mW 120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB120N08S4-04 IPI120N08S4-04 IPP120N08S4-04
Package
Marking
PG-TO263-3-2 4N0804
PG-TO262-3-1 4N0804
PG-TO220-3-1 4N0804
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current
Symbol
Conditions
ID
T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2)
E AS
I D=60A
Avalanche current, single pulse
I AS
-
Gate source voltage
V GS
-
Power dissipation
P tot
T C=25°C
Operating and storage temperature T j, T stg -
Rev. 1.1
page 1
Value 120
108
480 310 99 ±20 179 -55 ... +175
Unit A
mJ A V W °C 2022-08-24
IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC -
-
Thermal resistance, junction ambient, leaded
R thJA
-
-
SMD version, device on PCB
R thJA minimal footprint
-
6 cm2 cooling area3)
-
-
0.84 K/W
-
62
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= ...
