IPLU250N04S4-1R7
OptiMOS™-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°...
IPLU250N04S4-1R7
OptiMOS™-T2 Power-
Transistor
Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant); 100% lead free Ultra low Rds(on) 100% Avalanche tested
Product Summary VDS RDS(on) ID
40 V 1.7 mW 250 A
H-PSOF-8-1 Tab
8 1 Tab
1 8
Type
Package
IPLU250N04S4-1R7 H-PSOF-8-1
Marking 4N041R7
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T C=25 °C
E AS I D=125 A
I AS -
V GS
-
P tot T C=25 °C
T j, T stg -
Value 250
180
1000 170 250 ±20 188 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.0
page 1
2014-12-08
IPLU250N04S4-1R7
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 0.8 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS
V GS=0 V, I D=1 mA
40 -
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=80 µA 2.0 3.0 4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V, T j=25 °C
-
0.1 10 µA
Gate-source leakag...