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SM5S20AT Dataheets PDF



Part Number SM5S20AT
Manufacturers Vishay
Logo Vishay
Description Transient Voltage Suppressors
Datasheet SM5S20AT DatasheetSM5S20AT Datasheet (PDF)

www.vishay.com SM5S10AT thru SM5S43AT Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions DO-218 Compatible PRIMARY CHARACTERISTICS VWM VBR PPPM (10 x 1000 μs) PPPM (10 x 10 000 μs) PD IFSM TJ max. Polarity 10 V to 43 V 11.1 V to 52.8 V 3600 W 2800 W 5W 500 A 175 °C Uni-directional Package DO-218AC FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C.

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www.vishay.com SM5S10AT thru SM5S43AT Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions DO-218 Compatible PRIMARY CHARACTERISTICS VWM VBR PPPM (10 x 1000 μs) PPPM (10 x 10 000 μs) PD IFSM TJ max. Polarity 10 V to 43 V 11.1 V to 52.8 V 3600 W 2800 W 5W 500 A 175 °C Uni-directional Package DO-218AC FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification (varied by test condition) • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AC Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Heatsink is anode MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with 10/1000 μs waveform with 10/10 000 μs waveform Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Peak pulse current with 10/1000 μs waveform Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range Note (1) Non-repetitive current pulse at TA = 25 °C SYMBOL PPPM PD IPPM (1) IFSM TJ, TSTG VALUE 3600 2800 5.0 See next table 500 -55 to +175 UNIT W W A A °C Revision: 03-Jul-15 1 Document Number: 87609 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SM5S10AT thru SM5S43AT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR (V) MIN. MAX. TEST STAND-OFF CURRENT VOLTAGE IT (mA) VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM REVERSE LEAKAGE AT VWM TJ = 175 °C ID (μA) SM5S10AT 11.1 12.3 5.0 10.0 15 250 MAX. PEAK PULSE CURRENT AT 10/1000 μs WAVEFORM (A) 212 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 17.0 SM5S11AT 12.2 13.5 5.0 11.0 10 150 198 18.2 SM5S12AT 13.3 14.7 5.0 12.0 10 150 181 19.9 SM5S13AT 14.4 15.9 5.0 13.0 10 150 167 21.5 SM5S14AT 15.6 17.2 5.0 14.0 10 150 155 23.2 SM5S15AT 16.7 18.5 5.0 15.0 10 150 148 24.4 SM5S16AT 17.8 19.7 5.0 16.0 10 150 138 26.0 SM5S17AT 18.9 20.9 5.0 17.0 10 150 130 27.6 SM5S18AT 20.0 22.1 5.0 18.0 10 150 123 29.2 SM5S20AT 22.2 24.5 5.0 20.0 10 150 111 32.4 SM5S22AT 24.4 26.9 5.0 22.0 10 150 101 35.5 SM5S24AT 26.7 29.5 5.0 24.0 10 150 93 38.9 SM5S26AT 28.9 31.9 5.0 26.0 10 150 86 42.1 SM5S28AT 31.1 34.4 5.0 28.0 10 150 79 45.4 SM5S30AT 33.3 36.8 5.0 30.0 10 150 74 48.4 SM5S33AT 36.7 40.6 5.0 33.0 10 150 68 53.3 SM5S36AT 40.0 44.2 5.0 36.0 10 150 62 58.1 SM5S40AT SM5S43AT 44.4 47.8 49.1 52.8 5.0 5.0 40.0 43.0 10 10 150 150 56 64.5 52 69.4 Note • For all types maximum VF = 2.0 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance, junction to case RθJC VALUE 1.0 UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE SM5S10ATHE3/I (1) 2.505 I Note (1) AEC-Q101 qualified BASE QUANTITY 750 DELIVERY MODE 13" diameter plastic tape and reel, anode towards the sprocket hole Revision: 03-Jul-15 2 Document Number: 87609 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SM5S10AT thru SM5S43AT Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 8.0 10 000 6.0 Reverse Surge Power (W) Power Dissipation (W) Load Dump Power (W) 4.0 2.0 0 0 50 100 150 200 Case Temperature (°C) Fig. 1 - Power Derating Curve 3000 2500 2000 1500 1000 500 0 25 50 75 100 125 150 175 Case Temperature (°C) Fig. 2 - Load Dump Power Ch.


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