www.vishay.com
SM5S10AT thru SM5S43AT
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
DO-218 Compatible
PRIMARY CHARACTERISTICS
VWM VBR PPPM (10 x 1000 μs) PPPM (10 x 10 000 μs) PD IFSM TJ max. Polarity
10 V to 43 V 11.1 V to 52.8 V
3600 W 2800 W
5W 500 A 175 °C Uni-directional
Package
DO-218AC
FEATURES • Junction passivation optimized design passivated
anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability
and automotive requirement • Available in uni-directional polarity only • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification (varied by test
condition) • Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C • AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application.
MECHANICAL DATA Case: DO-218AC Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Heatsink is anode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
with 10/1000 μs waveform with 10/10 000 μs waveform
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note (1) Non-repetitive current pulse at TA = 25 °C
SYMBOL
PPPM
PD IPPM (1)
IFSM TJ, TSTG
VALUE 3600 2800 5.0
See next table 500
-55 to +175
UNIT
W
W A A °C
Revision: 03-Jul-15
1 Document Number: 87609
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SM5S10AT thru SM5S43AT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
BREAKDOWN VOLTAGE VBR (V)
MIN. MAX.
TEST STAND-OFF
CURRENT VOLTAGE
IT (mA)
VWM (V)
MAXIMUM REVERSE LEAKAGE
AT VWM ID (μA)
MAXIMUM REVERSE LEAKAGE AT VWM TJ = 175 °C ID (μA)
SM5S10AT 11.1 12.3
5.0
10.0
15
250
MAX. PEAK PULSE CURRENT
AT 10/1000 μs WAVEFORM
(A)
212
MAXIMUM CLAMPING VOLTAGE
AT IPPM VC (V)
17.0
SM5S11AT 12.2 13.5
5.0
11.0
10
150
198 18.2
SM5S12AT 13.3 14.7
5.0
12.0
10
150
181 19.9
SM5S13AT 14.4 15.9
5.0
13.0
10
150
167 21.5
SM5S14AT 15.6 17.2
5.0
14.0
10
150
155 23.2
SM5S15AT 16.7 18.5
5.0
15.0
10
150
148 24.4
SM5S16AT 17.8 19.7
5.0
16.0
10
150
138 26.0
SM5S17AT 18.9 20.9
5.0
17.0
10
150
130 27.6
SM5S18AT 20.0 22.1
5.0
18.0
10
150
123 29.2
SM5S20AT 22.2 24.5
5.0
20.0
10
150
111 32.4
SM5S22AT 24.4 26.9
5.0
22.0
10
150
101 35.5
SM5S24AT 26.7 29.5
5.0
24.0
10
150
93 38.9
SM5S26AT 28.9 31.9
5.0
26.0
10
150
86 42.1
SM5S28AT 31.1 34.4
5.0
28.0
10
150
79 45.4
SM5S30AT 33.3 36.8
5.0
30.0
10
150
74 48.4
SM5S33AT 36.7 40.6
5.0
33.0
10
150
68 53.3
SM5S36AT 40.0 44.2
5.0
36.0
10
150
62 58.1
SM5S40AT SM5S43AT
44.4 47.8
49.1 52.8
5.0 5.0
40.0 43.0
10 10
150 150
56 64.5 52 69.4
Note • For all types maximum VF = 2.0 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to case
RθJC
VALUE 1.0
UNIT °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SM5S10ATHE3/I (1)
2.505
I
Note (1) AEC-Q101 qualified
BASE QUANTITY 750
DELIVERY MODE
13" diameter plastic tape and reel, anode towards the sprocket hole
Revision: 03-Jul-15
2 Document Number: 87609
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SM5S10AT thru SM5S43AT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
8.0 10 000
6.0
Reverse Surge Power (W)
Power Dissipation (W)
Load Dump Power (W)
4.0
2.0
0 0 50 100 150 200 Case Temperature (°C)
Fig. 1 - Power Derating Curve
3000
2500
2000
1500
1000
500
0 25 50 75 100 125 150 175 Case Temperature (°C)
Fig. 2 - Load Dump Power Ch.