UD4606Q

UNISONIC TECHNOLOGIES CO., LTD UD4606Q DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)  DESCRIPTION The UTC UD4606Q provides excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary MOSFETs may be help to form a level shifted high side switch and also for lots of other applications.  FEATURES * N-Channel: 30V/6.9A RDS(ON) = 22.5 mΩ (typ.) @ VGS=10V, ID=6.9A RDS(ON) = 34.5 mΩ (typ.) @ VGS=4.5V, ID=5A * P-Channel: -30V/-6A RDS(ON) = 37.5 mΩ (typ.) @ VGS=-10V, ID=-6A RDS(ON) = 44 mΩ (typ.) @ VGS=-4.5V, ID=-5A * Reliable and rugged  SYMBOL Power MOSFET SOP-8  ORDERING INFORMATION Ordering Number UD4606QG-S08-R Package SOP-8 Pin Assignment 12345678 S1 G1 S2 G2 D2 D2 D1 D1 Packing Tape Reel www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 8 QW-R211-021.B UD4606Q  MARKING 876 5 UTC UD4606QG 1234 Date Code Lot Code Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 10 QW-R211-021.B UD4606Q Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) N-CHANNEL PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note2) Pulsed Drain Current (Note2) Power Dissipation Junction Temperature Storage Temperature SYMBOL VDSS VGSS ID IDM PD TJ TSTG RATINGS 30 ±20 6.9 30 2 +150 -55 ~ +150 UNIT V V A A W °С °С P-CHANNEL PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS -30 ±20 V V Continuous Drain Current (...