N-CHANNEL MOSFET. UT3416-H Datasheet

UT3416-H MOSFET. Datasheet pdf. Equivalent

UT3416-H Datasheet
Recommendation UT3416-H Datasheet
Part UT3416-H
Description N-CHANNEL MOSFET
Feature UT3416-H; UNISONIC TECHNOLOGIES CO., LTD UT3416-H 6.7A, 20V N-CHANNEL MOSFET Power MOSFET  DESCRIPTION The .
Manufacture UTC
Datasheet
Download UT3416-H Datasheet




UTC UT3416-H
UNISONIC TECHNOLOGIES CO., LTD
UT3416-H
6.7A, 20V N-CHANNEL
MOSFET
Power MOSFET
DESCRIPTION
The UTC UT3416-H is an N-Channel MOSFET, it uses UTC’s
advanced technology to provide customers with a minimum on-state
resistance and high switching speed, etc.
The UTC UT3416-H is suitable for high efficiency fast switching
applications.
FEATURES
* RDS(ON)<19m@ VGS=4.5V, ID=4A
* High switching speed
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Ordering Number
UT3416G-AE2-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-23-3
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UTC UT3416-H
UT3416-H
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20 V
Gate-Source Voltage
Drain Current
Continuous
TC=25°C
TC=100°C
Pulsed (Note 1)
VGSS
ID
IDM
±10 V
6.7 A
4.2 A
26.8 A
Power Dissipation
TC=25°C
Derate above 25°C
PD
1.56
0.012
W
W/°C
Junction Temperature
Storage Temperature Range
TJ
TSTG
-55~+150
-55~+150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
SYMBOL
θJA
RATINGS
80
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS ID=250µA, VGS=0V
BVDSS/TJ Reference to 25°C, ID=1mA
IDSS
VDS=20V, VGS=0V, TJ=25°C
VDS=16V, VGS=0V, TJ=125°C
IGSS
VGS=+10V, VDS=0V
VGS=-10V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) Temperature Coefficient
VGS(TH)
VGS(TH)
VDS=VGS, ID=250µA
VGS=4.5V, ID=4A
Static Drain-Source On-State Resistance RDS(ON) VGS=2.5V, ID=3A
VGS=1.8V, ID=2A
Forward Transconductance
gFS VDS=10V, ID=4A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=10V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2, 3)
QG
Gate to Source Charge (Note 2, 3)
QGS VGS=4.5V, VDS=10V, ID=4A
Gate to Drain Charge (Note 2, 3)
QGD
Turn-ON Delay Time (Note 2, 3)
tD(ON)
Rise Time (Note 2, 3)
Turn-OFF Delay Time (Note 2, 3)
tR
tD(OFF)
VDD=10V, VGS=4.5V, ID=1A,
RG=25
Fall-Time (Note 2, 3)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current
Pulsed Source Current
IS
ISM
VG=VD=0V , Force Current
Drain-Source Diode Forward Voltage
VSD IS=1A, VGS=0V, TJ=25°C
Notes: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed, pulse width300µs, duty cycle2%.
3. Essentially independent of operating temperature.
MIN TYP MAX UNIT
20 V
0.02 V/°C
1 µA
10 µA
+100 nA
-100 nA
0.3 0.6 0.8 V
2 mV/°C
15 19 m
18 24 m
23 32 m
9.5 S
600 870
70 100
45 65
pF
pF
pF
5.8 8
0.6 1
24
5.0 9
14.4 27
30.0 55
9.2 17
nC
nC
nC
ns
ns
ns
ns
6.7 A
26.8 A
1V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTC UT3416-H
UT3416-H
TEST CIRCUITS AND WAVEFORMS
VDS
90%
10%
VGS
td(ON) tR
tON
td(OFF) tF
tOFF
Switching Time Waveform
Power MOSFET
VGS
10V/4.5V
QGS
QG
QGD
Charge
Gate Charge Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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