N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD
UT8067
Preliminary
9A, 30V, N-CHANNEL MOSFET
Power MOSFET
DESCRIPTION
The UTC UT80...
Description
UNISONIC TECHNOLOGIES CO., LTD
UT8067
Preliminary
9A, 30V, N-CHANNEL MOSFET
Power MOSFET
DESCRIPTION
The UTC UT8067 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, etc.
The UTC UT8067 is suitable for high-efficiency DC-DC converters, mobile handsets and notebook PCs.
FEATURES
* RDS(ON) < 33 mΩ @ VGS=4.5V, ID=4.5A * High switching speed
ORDERING INFORMATION
Ordering Number
UT8067G-S08-R Note: Pin Assignment: S: Source
G: Gate
Package
SOP-8 D: Drain
Pin Assignment 12345678 S S SGDDD D
Packing Tape Reel
MARKING
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1 of 5
QW-R210-005.b
UT8067
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous (Note 1) Pulsed (Note 1)
ID IDM
9 36
A A
Avalanche Current
IAR 9 A
Single Pulsed Avalanche Energy (Note 2)
EAS
21 mJ
Power Dissipation (t=10s)
PD 1.0 W
Junction Temperature
TJ 150 °C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 0.2mH, IAS = 9A, ...
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