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UT8067

UTC

N-CHANNEL MOSFET

UNISONIC TECHNOLOGIES CO., LTD UT8067 Preliminary 9A, 30V, N-CHANNEL MOSFET Power MOSFET  DESCRIPTION The UTC UT80...


UTC

UT8067

File Download Download UT8067 Datasheet


Description
UNISONIC TECHNOLOGIES CO., LTD UT8067 Preliminary 9A, 30V, N-CHANNEL MOSFET Power MOSFET  DESCRIPTION The UTC UT8067 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, etc. The UTC UT8067 is suitable for high-efficiency DC-DC converters, mobile handsets and notebook PCs.  FEATURES * RDS(ON) < 33 mΩ @ VGS=4.5V, ID=4.5A * High switching speed  ORDERING INFORMATION Ordering Number UT8067G-S08-R Note: Pin Assignment: S: Source G: Gate Package SOP-8 D: Drain Pin Assignment 12345678 S S SGDDD D Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R210-005.b UT8067 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous (Note 1) Pulsed (Note 1) ID IDM 9 36 A A Avalanche Current IAR 9 A Single Pulsed Avalanche Energy (Note 2) EAS 21 mJ Power Dissipation (t=10s) PD 1.0 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 0.2mH, IAS = 9A, ...




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