Document
UNISONIC TECHNOLOGIES CO., LTD UTN6266
30A, 60V N-CHANNEL TRENCH MOSFET
Power MOSFET
DESCRIPTION
The UTC UTN6266 is a N-Channel trench mosfet, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge.
The UTC UTN6266 is suitable for Synchronus Rectification in DC/DC and AC/DC Converters and industrial and Motor Drive applications.
FEATURES
* RDS(ON) ≤ 15 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 19 mΩ @ VGS=4.5V, ID=18A
* Low gate charge * Low RDS(ON) * High switching speed
11
TO-220
TO-251
1 SOP-8
TO-252 1
DFN5060-8
SYMBOL 2.Drain
Drain (5, 6, 7, 8)
1.Gate
Gate (4)
3.Source TO-220 / TO-251 / TO-252
Source (1, 2, 3) SOP-8 / DFN5060-8
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UTN6266L-TA3-T
UTN6266G-TA3-T
TO-220
UTN6266L-TM3-T
UTN6266G-TM3-T
TO-251
UTN6266L-TN3-R
UTN6266G-TN3-R
TO-252
UTN6266L-S08-R
UTN6266G-S08-R
SOP-8
UTN6266L-K08-5060-R UTN6266G-K08-5060-R DFN5060-8
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 12345678 GDS - - - - GDS - - - - GDS - - - - S S SGDDDD S S SGDDDD
Packing
Tube Tube Tape Reel Tape Reel Tape Reel
UTN6266G-TA3-T
(1)Packing Type (2)Package Type (3)Green Package
(1) T: Tube, R: Tape Reel (2) TA3: TO-220, TM3: TO-251, TN3: TO-252
S08: SOP-8, K08-5060: DFN5060-8 (3) G: Halogen Free and Lead Free, L: Lead Free
www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd
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UTN6266
MARKING Package TO-220 TO-251 TO-252
SOP-8
DFN5060-8
Power MOSFET
Marking
Lot Code
UTC UTN6266
1
L: Lead Free G: Halogen Free
Date Code
876 5
UTC UTN6266
1234
Date Code
L: Lead Free G: Halogen Free
Lot Code
Lot Code
UTC UTN 6266
Date Code
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
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QW-R502-B28.H
UTN6266
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage Drain Current Avalanche Current (Note 3) Avalanche Energy (Note 2, 3)
Power Dissipation
Continuous Pulsed
TO-220 TO-251/TO-252 SOP-8
VDSS VGSS
ID IDM IAS EAS
PD
60 ±20 30 90 20 280
2 1.2 1.5
V V A A A mJ W W W
DFN5060-8
1.92 W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Single pulse width by junction temperature TJ(max)=150°C. 3. L = 1.4mH, IAS = 20A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
TO-220
62.5
TO-251
110
Junction to Ambient
TO-252 (Note 2) SOP-8 (Note 2)
θJA
60 85
DFN5060-8 (Note 2)
65
TO-220
1.4
Junction-to-Case
TO-251/TO-252 SOP-8
θJC
2.6 24
DFN5060-8
12
Notes: 1. The θJA is the sum of the thermal impedance from junction to case θJC and case to ambient. 2. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
UNIT °C/W °C/W °C/W °C/W
°C/W
°C/W °C/W °C/W °C/W
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
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UTN6266
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V VDS=60V, VGS=0V, TJ=55°C
Gate-Body Leakage Current ON CHARACTERISTICS
Forward Reverse
IGSS
VGS=+20V, VDS=0V VGS=-20V, VDS=0V
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
VGS=10V, ID=20A
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=20A, TJ=125°C
VGS=4.5V, ID=18A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS VGS=0V, VDS=30V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
Gate Resistance SWITCHING PARAMETERS
RG f=1.0MHz
Total Gate Charge
QG
Gate to Source Charge
QGS VGS=10V, VDS=30V, ID=20A
Gate to Drain Charge
QGD
Turn-ON Delay Time Rise Time Turn-OFF Delay Time
tD(ON) tR
tD(OFF)
VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Drain-Source Diode Forward Voltage (Note2)
VSD IS=1A, VGS=0V
Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤ 300us, duty cycle ≤ 2%. 3. Surface Mounted on 1in 2 pad area.
MIN TYP MAX UNIT
60 V 1 µA 5 µA
+100 nA -100 nA
1.5 2.0 2.5 V 12 15 mΩ 20.5 25 mΩ 15 19 mΩ
2800 190 140 2.4
pF pF pF Ω
62 nC 8 nC 10 nC 12 ns 16 ns 52 ns 22 ns
30 A 0.72 1 V
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
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TEST CIRCUITS AND WAVEFORMS
Power MOSFET
3mA
Same Type as DUT
12V
200nF 50kΩ
VGS
300nF
DUT
VGS
10V
VDS
QGS
QG QGD
Gate Charge Test Circuit
Charge Gate Charge Waveforms
VDS
RG RL
90%
10V
VGS
VDS
.