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UTN6266 Dataheets PDF



Part Number UTN6266
Manufacturers UTC
Logo UTC
Description N-CHANNEL MOSFET
Datasheet UTN6266 DatasheetUTN6266 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UTN6266 30A, 60V N-CHANNEL TRENCH MOSFET Power MOSFET  DESCRIPTION The UTC UTN6266 is a N-Channel trench mosfet, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC UTN6266 is suitable for Synchronus Rectification in DC/DC and AC/DC Converters and industrial and Motor Drive applications.  FEATURES * RDS(ON) ≤ 15 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 19 mΩ @ VGS=4.5V, ID=18A * Low .

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UNISONIC TECHNOLOGIES CO., LTD UTN6266 30A, 60V N-CHANNEL TRENCH MOSFET Power MOSFET  DESCRIPTION The UTC UTN6266 is a N-Channel trench mosfet, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC UTN6266 is suitable for Synchronus Rectification in DC/DC and AC/DC Converters and industrial and Motor Drive applications.  FEATURES * RDS(ON) ≤ 15 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 19 mΩ @ VGS=4.5V, ID=18A * Low gate charge * Low RDS(ON) * High switching speed 11 TO-220 TO-251 1 SOP-8 TO-252 1 DFN5060-8  SYMBOL 2.Drain Drain (5, 6, 7, 8) 1.Gate Gate (4) 3.Source TO-220 / TO-251 / TO-252 Source (1, 2, 3) SOP-8 / DFN5060-8  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTN6266L-TA3-T UTN6266G-TA3-T TO-220 UTN6266L-TM3-T UTN6266G-TM3-T TO-251 UTN6266L-TN3-R UTN6266G-TN3-R TO-252 UTN6266L-S08-R UTN6266G-S08-R SOP-8 UTN6266L-K08-5060-R UTN6266G-K08-5060-R DFN5060-8 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 GDS - - - - GDS - - - - GDS - - - - S S SGDDDD S S SGDDDD Packing Tube Tube Tape Reel Tape Reel Tape Reel UTN6266G-TA3-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TM3: TO-251, TN3: TO-252 S08: SOP-8, K08-5060: DFN5060-8 (3) G: Halogen Free and Lead Free, L: Lead Free www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-B28.H UTN6266  MARKING Package TO-220 TO-251 TO-252 SOP-8 DFN5060-8 Power MOSFET Marking Lot Code UTC UTN6266 1 L: Lead Free G: Halogen Free Date Code 876 5 UTC UTN6266 1234 Date Code L: Lead Free G: Halogen Free Lot Code Lot Code UTC UTN 6266 Date Code UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-B28.H UTN6266 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Avalanche Current (Note 3) Avalanche Energy (Note 2, 3) Power Dissipation Continuous Pulsed TO-220 TO-251/TO-252 SOP-8 VDSS VGSS ID IDM IAS EAS PD 60 ±20 30 90 20 280 2 1.2 1.5 V V A A A mJ W W W DFN5060-8 1.92 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Single pulse width by junction temperature TJ(max)=150°C. 3. L = 1.4mH, IAS = 20A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C  THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS TO-220 62.5 TO-251 110 Junction to Ambient TO-252 (Note 2) SOP-8 (Note 2) θJA 60 85 DFN5060-8 (Note 2) 65 TO-220 1.4 Junction-to-Case TO-251/TO-252 SOP-8 θJC 2.6 24 DFN5060-8 12 Notes: 1. The θJA is the sum of the thermal impedance from junction to case θJC and case to ambient. 2. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. UNIT °C/W °C/W °C/W °C/W °C/W °C/W °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-B28.H UTN6266 Power MOSFET  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V VDS=60V, VGS=0V, TJ=55°C Gate-Body Leakage Current ON CHARACTERISTICS Forward Reverse IGSS VGS=+20V, VDS=0V VGS=-20V, VDS=0V Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA VGS=10V, ID=20A Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A, TJ=125°C VGS=4.5V, ID=18A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=30V, f=1.0MHz Reverse Transfer Capacitance CRSS Gate Resistance SWITCHING PARAMETERS RG f=1.0MHz Total Gate Charge QG Gate to Source Charge QGS VGS=10V, VDS=30V, ID=20A Gate to Drain Charge QGD Turn-ON Delay Time Rise Time Turn-OFF Delay Time tD(ON) tR tD(OFF) VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Drain-Source Diode Forward Voltage (Note2) VSD IS=1A, VGS=0V Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤ 300us, duty cycle ≤ 2%. 3. Surface Mounted on 1in 2 pad area. MIN TYP MAX UNIT 60 V 1 µA 5 µA +100 nA -100 nA 1.5 2.0 2.5 V 12 15 mΩ 20.5 25 mΩ 15 19 mΩ 2800 190 140 2.4 pF pF pF Ω 62 nC 8 nC 10 nC 12 ns 16 ns 52 ns 22 ns 30 A 0.72 1 V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-B28.H UTN6266  TEST CIRCUITS AND WAVEFORMS Power MOSFET 3mA Same Type as DUT 12V 200nF 50kΩ VGS 300nF DUT VGS 10V VDS QGS QG QGD Gate Charge Test Circuit Charge Gate Charge Waveforms VDS RG RL 90% 10V VGS VDS .


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