N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT4850
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UTT4850 is a N-channel, it uses UTC’...
Description
UNISONIC TECHNOLOGIES CO., LTD UTT4850
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UTT4850 is a N-channel, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and high switching speed.
FEATURES
*RDS(ON)< 25mΩ @ VGS=10V, ID=6.0A RDS(ON)< 31mΩ @ VGS=4.5V, ID=5.1A
* High switching speed
SYMBOL
D
Power MOSFET
SOP-8
G
S
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT4850L-S08-R
UTT4850G-S08-R
Note: Pin Assignment: G: Gate D: Drain
Package
SOP-8 S: Source
Pin Assignment 12345678 S S SGDDDD
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 4
QW-R209-032.B
UTT4850
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 60 V
Gate-Source Voltage
VGSS ±20 V
Continuous Drain Current (TJ=175°C) (Note 1)
TA=25°C TA=70°C
ID
6.0 A 5.0 A
Pulsed Drain Current
IDM 24 A
Avalanche Current Repetitive Avalanche Energy
IAS 6 A EAS 120 mJ
Power Dissipation (Note 1)
TA=25°C TA=70°C
PD
1.7 W 1.2 W
Junction Temperature
TJ
-50 ~ +150
°C
Storage Temperature Range
TSTG
-50 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=6.66mH, IAS=6A, VDD= 50V, RG=25Ω, Starting TJ=25°C
THERMAL CHARACTERISTICS
PARAMET...
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