UTT8P03-H

UNISONIC TECHNOLOGIES CO., LTD UTT8P03-H -8A, -30V, P-CHANNEL MOSFET  DESCRIPTION The UTC UTT8P03-H is a P-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge. The UTC UTT8P03-H is suitable for load switching.  FEATURES * RDS(ON) ≤ 26mΩ @ VGS=-10V, ID=-8A RDS(ON) ≤ 34mΩ @ VGS=-4.5V, ID=-7A * High switching speed * Low gate charge  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Package UTT8P03G-K08-3020-R DFN-8(3×2) Note: Pin Assignment: D: Drain G: Gate S: Source Pin Assignment 12345678 DDDGSDDD Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 8 QW-R210-006.a UTT8P03-H Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS -30 V ±20 V Drain Current Continuous TC=25°C TC=70°C ID -8 A -6 A Power Dissipation (Note2) Pulsed (Note 3) IDM PD -60 A 3W Junction Temperature Storage Temperature Range TJ TSTG -55~+150 -55~+150 °C °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The power dissipation PD is based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by junctio...