FCD5N60_F085

FCD5N60_F085 N-Channel SuperFET® MOSFET FCD5N60_F085 N-Channel SuperFET® MOSFET 600 V, 4.6 A, 1.1 Ω Features „ 600V, 4.6A, typ. Rds(on)=860mΩ@VGS=10V „ Ultra Low Gate Charge (Typ. Qg = 16 nC) „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive On Board Charger „ Automotive DC/DC Converter for HEV Description SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is suitable for various automotive DC/DC power conversion. July 2015 D D G G S DTO-P-2A5K2 (TO-252) S For current package drawing, please refer to the Fairchild web‐ site  at  http://www.fairchildsemi.com/package‐drawings/TO/ TO252A03.pdf. MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate Above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TC = 25°C TC = 25°C (Note 1) (Note 2) Ratings 600 ±30 4.6 See Figure 4 29 54 1.56 -55 to + 150 2.3 8...