N-Channel SuperFET MOSFET
FCD5N60_F085 N-Channel SuperFET® MOSFET
FCD5N60_F085
N-Channel SuperFET® MOSFET
600 V, 4.6 A, 1.1 Ω
Features
600V, 4....
Description
FCD5N60_F085 N-Channel SuperFET® MOSFET
FCD5N60_F085
N-Channel SuperFET® MOSFET
600 V, 4.6 A, 1.1 Ω
Features
600V, 4.6A, typ. Rds(on)=860mΩ@VGS=10V Ultra Low Gate Charge (Typ. Qg = 16 nC) UIS Capability RoHS Compliant Qualified to AEC Q101
Applications
Automotive On Board Charger
Automotive DC/DC Converter for HEV
Description
SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is suitable for various automotive DC/DC power conversion.
July 2015
D
D G
G S
DTO-P-2A5K2 (TO-252)
S
For current package drawing, please refer to the Fairchild web‐ site at http://www.fairchildsemi.com/package‐drawings/TO/ TO252A03.pdf.
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation Derate Above 25oC
TJ, TSTG RθJC RθJA
Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient
TC = 25°C TC = 25°C
(Note 1)
(Note 2)
Ratings 600 ±30 4.6
See Figure 4 29 54 1.56
-55 to + 150 2.3 8...
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