FCD600N60Z

FCD600N60Z — N-Channel SuperFET® II MOSFET FCD600N60Z N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ November 2013 Features 650 V @ TJ = 150°C Typ. RDS(on) = 510 mΩ Ultra Low Gate Charge (Typ. Qg = 20 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF) 100% Avalanche Tested ESD Improved Capacity RoHS Compliant Applications LCD / LED / PDP TV and Monitor Lighting Solar Inverter AC-DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D G S D D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. S Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage - DC - AC (f > 1 Hz) Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) MOSFET dv/dt Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derat...