FCD620N60ZF

FCD620N60ZF — N-Channel SuperFET® II FRFET® MOSFET FCD620N60ZF N-Channel SuperFET® II FRFET® MOSFET 600 V, 7.3 A, 620 mΩ December 2014 Features 650 V @ TJ = 150oC Typ. RDS(on) = 528 mΩ Ultra Low Gate Charge (Typ. Qg = 20 nC) Low Effective output Capacitance (Typ. Coss(eff.) = 71 pF) 100% Avalanche Tested ESD Improved Capacity RoHS Compliant Applications LCD / LED / PDP TV and Monitor Lighting Solar Invertor / AC-DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. D G S D D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. S Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage - DC - AC (f > 1 Hz) Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Single Pulsed Avalanche Energy...