N-Channel MOSFET
FCH072N60 — N-Channel SuperFET® II MOSFET
FCH072N60
N-Channel SuperFET® II MOSFET
600 V, 52 A, 72 mΩ
August 2014
Feat...
Description
FCH072N60 — N-Channel SuperFET® II MOSFET
FCH072N60
N-Channel SuperFET® II MOSFET
600 V, 52 A, 72 mΩ
August 2014
Features
650 V @ TJ = 150°C Typ. RDS(on) = 66 mΩ Ultra Low Gate Charge (Typ. Qg = 95 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 421 pF) 100% Avalanche Tested RoHS Compliant
Applications
Telecom / Sever Power Supplies Industrial Power Supplies
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
D
G D S
TO-247
G S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS VGSS
ID IDM EAS IAR EAR dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt
Power Dissipation
- DC - AC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
(TC = 25oC) - Derate Above 25oC
(f > 1 Hz)
(Note 1) (Note 2) (Note 1) (Note 1)
(Note 3)
TJ, TSTG TL
Operating and Storage Temperature Range Maximum Lead Temp...
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